onsemi 650 V 22.5 A Diode Schottky 2-Pin TO-220 FFSP2065B
- N° de stock RS:
- 194-5755
- Référence fabricant:
- FFSP2065B
- Fabricant:
- onsemi
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 194-5755
- Référence fabricant:
- FFSP2065B
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 22.5A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 882A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.4V | |
| Peak Reverse Current Ir | 160μA | |
| Maximum Operating Temperature | 175°C | |
| Height | 16.51mm | |
| Standards/Approvals | RoHS | |
| Width | 2.92mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 22.5A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 882A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.4V | ||
Peak Reverse Current Ir 160μA | ||
Maximum Operating Temperature 175°C | ||
Height 16.51mm | ||
Standards/Approvals RoHS | ||
Width 2.92mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, TO-220-2L
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, TO-220-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Max Junction Temperature
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
Pb-Free, Halogen Free/BFR Free
175 C
94 mJ
Applications
General Purpose
SMPS
Solar Inverter
UPS
Power Switching Circuit
Liens connexes
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