onsemi 650 V 20 A Diode Schottky 2-Pin TO-247 FFSH2065B-F085
- N° de stock RS:
- 189-0432
- Référence fabricant:
- FFSH2065B-F085
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
17,35 €
(TVA exclue)
20,994 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Pénurie d'approvisionnement
- 338 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Notre stock actuel est limité et nos fournisseurs s'attendent à des pénuries.
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 8,675 € | 17,35 € |
| 20 + | 7,475 € | 14,95 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 189-0432
- Référence fabricant:
- FFSH2065B-F085
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 889A | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 160μA | |
| Maximum Forward Voltage Vf | 2.4V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.82 mm | |
| Length | 15.87mm | |
| Standards/Approvals | No | |
| Height | 2.82mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 889A | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 160μA | ||
Maximum Forward Voltage Vf 2.4V | ||
Maximum Operating Temperature 175°C | ||
Width 4.82 mm | ||
Length 15.87mm | ||
Standards/Approvals No | ||
Height 2.82mm | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20A, 650V, D2, TO-247-2L Automotive Silicon Carbide (SiC) Schottky Diode, 650 V
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost
Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
PPAP Capable
Applications
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
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