onsemi 650 V 25 A Diode Schottky 2-Pin TO-247
- N° de stock RS:
- 178-4268
- Référence fabricant:
- FFSH2065A
- Fabricant:
- onsemi
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 178-4268
- Référence fabricant:
- FFSH2065A
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 25A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 1.75V | |
| Peak Reverse Current Ir | 600μA | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1.1kA | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.87mm | |
| Standards/Approvals | No | |
| Height | 20.82mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 25A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 1.75V | ||
Peak Reverse Current Ir 600μA | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1.1kA | ||
Maximum Operating Temperature 175°C | ||
Length 15.87mm | ||
Standards/Approvals No | ||
Height 20.82mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D1, TO-247-2L
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D1, TO-247-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
No Reverse Recovery / No Forward Recovery
Applications
PFC
Industrial Power
Solar
EV Charger
UPS
Welding
Liens connexes
- onsemi 650 V 25 A Diode Schottky 2-Pin TO-247 FFSH2065A
- onsemi 650 V 50 A Schottky Diode Schottky 2-Pin TO-247
- onsemi 650 V 30 A Diode Schottky 2-Pin TO-247
- onsemi 650 V 20 A Schottky Diode Schottky 3-Pin TO-247 FFSH2065BDN-F085
- onsemi 650 V 50 A Schottky Diode Schottky 2-Pin TO-247 FFSH5065B-F085
- onsemi 650 V 30 A Diode Schottky 2-Pin TO-247 FFSH3065A
- onsemi 650 V 10 A Diode Schottky 2-Pin TO-247
- onsemi 650 V 20 A Diode Schottky 2-Pin TO-247