onsemi 650 V 25 A Diode Schottky 2-Pin TO-247

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Sous-total (1 tube de 30 unités)*

87,66 €

(TVA exclue)

106,08 €

(TVA incluse)

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Dernier stock RS
  • 30 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
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Prix par unité
le tube*
30 +2,922 €87,66 €

*Prix donné à titre indicatif

N° de stock RS:
178-4268
Référence fabricant:
FFSH2065A
Fabricant:
onsemi
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Marque

onsemi

Mount Type

Through Hole

Product Type

Diode

Package Type

TO-247

Maximum Continuous Forward Current If

25A

Peak Reverse Repetitive Voltage Vrrm

650V

Diode Configuration

Single

Rectifier Type

Schottky

Pin Count

2

Maximum Forward Voltage Vf

1.75V

Peak Non-Repetitive Forward Surge Current Ifsm

1.1kA

Peak Reverse Current Ir

600μA

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

4.82 mm

Standards/Approvals

No

Height

20.82mm

Length

15.87mm

Diameter

6.85 mm

Automotive Standard

No

Pays d'origine :
CN

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D1, TO-247-2L
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D1, TO-247-2L


Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Max Junction Temperature 175 °C

High Surge Current Capacity

Positive Temperature Coefficient

No Reverse Recovery / No Forward Recovery

Applications

PFC

Industrial Power

Solar

EV Charger

UPS

Welding

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