Vishay 100 V 8 A Diode Schottky 3-Pin TO-277 V8P10-M3/86A
- N° de stock RS:
- 165-2708
- Référence fabricant:
- V8P10-M3/86A
- Fabricant:
- Vishay
Actuellement indisponible
Désolés, nous ne savons pas quand ce produit sera réapprovisionné.
- N° de stock RS:
- 165-2708
- Référence fabricant:
- V8P10-M3/86A
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | TO-277 | |
| Maximum Continuous Forward Current If | 8A | |
| Peak Reverse Repetitive Voltage Vrrm | 100V | |
| Series | V8PX | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 680mV | |
| Minimum Operating Temperature | -40°C | |
| Peak Reverse Current Ir | 70μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 150A | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.15mm | |
| Standards/Approvals | No | |
| Diameter | 6.65mm | |
| Height | 1.2mm | |
| Length | 4.35mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type TO-277 | ||
Maximum Continuous Forward Current If 8A | ||
Peak Reverse Repetitive Voltage Vrrm 100V | ||
Series V8PX | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 680mV | ||
Minimum Operating Temperature -40°C | ||
Peak Reverse Current Ir 70μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 150A | ||
Maximum Operating Temperature 150°C | ||
Width 6.15mm | ||
Standards/Approvals No | ||
Diameter 6.65mm | ||
Height 1.2mm | ||
Length 4.35mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor
The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over Planar Schottky rectifiers. At operating voltages of 45V and above Planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.
Features
Patented Trench Structure
Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters
High power density and low forward voltage
Schottky Rectifiers, Vishay Semiconductor
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