STMicroelectronics 650 V 10 A Schottky Diode Schottky 2-Pin TO-220AC STPSC10065D
- N° de stock RS:
- 164-7015
- Référence fabricant:
- STPSC10065D
- Fabricant:
- STMicroelectronics
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 164-7015
- Référence fabricant:
- STPSC10065D
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | Schottky Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220AC | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | STPSC10065 | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 210A | |
| Maximum Forward Voltage Vf | 1.65V | |
| Minimum Operating Temperature | -40°C | |
| Peak Reverse Current Ir | 900μA | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.4mm | |
| Width | 4.6mm | |
| Standards/Approvals | ECOPACK, UL94 V0 | |
| Height | 15.75mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type Schottky Diode | ||
Mount Type Through Hole | ||
Package Type TO-220AC | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series STPSC10065 | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 210A | ||
Maximum Forward Voltage Vf 1.65V | ||
Minimum Operating Temperature -40°C | ||
Peak Reverse Current Ir 900μA | ||
Maximum Operating Temperature 175°C | ||
Length 10.4mm | ||
Width 4.6mm | ||
Standards/Approvals ECOPACK, UL94 V0 | ||
Height 15.75mm | ||
Automotive Standard No | ||
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases
No or negligible reverse recovery
Switching behavior independent of temperature
Dedicated to PFC applications
High forward surge capability
Operating Tj from -40 °C to 175 °C
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