STMicroelectronics 650 V 8 A Diode Schottky 2-Pin TO-220
- N° de stock RS:
- 164-6987P
- Référence fabricant:
- STPSC8065D
- Fabricant:
- STMicroelectronics
Indisponible
RS n'aura plus ce produit en stock.
- N° de stock RS:
- 164-6987P
- Référence fabricant:
- STPSC8065D
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 8A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | STPSC | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -40°C | |
| Peak Reverse Current Ir | 750μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 200A | |
| Maximum Forward Voltage Vf | 1.65V | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.75mm | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Diameter | 3.75 mm | |
| Width | 4.6 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 8A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series STPSC | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Minimum Operating Temperature -40°C | ||
Peak Reverse Current Ir 750μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 200A | ||
Maximum Forward Voltage Vf 1.65V | ||
Maximum Operating Temperature 175°C | ||
Height 15.75mm | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Diameter 3.75 mm | ||
Width 4.6 mm | ||
Automotive Standard No | ||
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases
No or negligible reverse recovery
Switching behavior independent of temperature
Dedicated to PFC applications
High forward surge capability
Operating Tj from -40 °C to 175 °C