onsemi 30 V 200 mA Schottky Diode Schottky 6-Pin SOT-363
- N° de stock RS:
- 145-4164
- Référence fabricant:
- MBD54DWT1G
- Fabricant:
- onsemi
Sous-total (1 bobine de 3000 unités)*
186,00 €
(TVA exclue)
225,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 3 000 unité(s) expédiée(s) à partir du 02 juillet 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,062 € | 186,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 145-4164
- Référence fabricant:
- MBD54DWT1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Mount Type | Surface | |
| Product Type | Schottky Diode | |
| Package Type | SOT-363 (SC-88) | |
| Maximum Continuous Forward Current If | 200mA | |
| Peak Reverse Repetitive Voltage Vrrm | 30V | |
| Series | MBD54DWT1G | |
| Diode Configuration | Isolated | |
| Rectifier Type | Schottky | |
| Pin Count | 6 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 600mA | |
| Peak Reverse Current Ir | 2μA | |
| Maximum Operating Temperature | 125°C | |
| Peak Reverse Recovery Time trr | 5ns | |
| Standards/Approvals | Pb-Free, RoHS | |
| Length | 2.2mm | |
| Height | 1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Mount Type Surface | ||
Product Type Schottky Diode | ||
Package Type SOT-363 (SC-88) | ||
Maximum Continuous Forward Current If 200mA | ||
Peak Reverse Repetitive Voltage Vrrm 30V | ||
Series MBD54DWT1G | ||
Diode Configuration Isolated | ||
Rectifier Type Schottky | ||
Pin Count 6 | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 600mA | ||
Peak Reverse Current Ir 2μA | ||
Maximum Operating Temperature 125°C | ||
Peak Reverse Recovery Time trr 5ns | ||
Standards/Approvals Pb-Free, RoHS | ||
Length 2.2mm | ||
Height 1mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
ON Semiconductor Schottky Barrier Diodes
This ON Semiconductor Schottky power rectifier employs the Schottky barrier principle using a barrier metal to create the best forward voltage drop−reverse current exchange. Suitable for low voltage, high-frequency rectification as well as a freewheeling and polarity protection diode in a range of surface mount applications wherever a more Compact size and weight are key.
• Pb-Free
• Designed for Optimal Automated Board Assembly
• Stress protection guarding
• Epoxy Moulded Case
• Lightweight 11.7mg package
Standards
Products with NSV-, SBR- or S-prefixed Manufacturer Part Nos are AEC-Q101 automotive qualified.
Liens connexes
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