Vishay 1200V 120A, Dual Rectifier Diode, 4-Pin SOT-227 VS-HFA140FA120
- N° de stock RS:
- 145-2149
- Référence fabricant:
- VS-HFA140FA120
- Fabricant:
- Vishay
Indisponible
RS n'aura plus ce produit en stock.
- N° de stock RS:
- 145-2149
- Référence fabricant:
- VS-HFA140FA120
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Mounting Type | Panel Mount | |
| Package Type | SOT-227 | |
| Maximum Continuous Forward Current | 120A | |
| Peak Reverse Repetitive Voltage | 1200V | |
| Diode Configuration | Isolated | |
| Rectifier Type | Recovery Rectifier | |
| Diode Type | Rectifier | |
| Pin Count | 4 | |
| Maximum Forward Voltage Drop | 5.3V | |
| Number of Elements per Chip | 2 | |
| Diode Technology | Silicon Junction | |
| Peak Reverse Recovery Time | 218ns | |
| Peak Non-Repetitive Forward Surge Current | 350A | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Mounting Type Panel Mount | ||
Package Type SOT-227 | ||
Maximum Continuous Forward Current 120A | ||
Peak Reverse Repetitive Voltage 1200V | ||
Diode Configuration Isolated | ||
Rectifier Type Recovery Rectifier | ||
Diode Type Rectifier | ||
Pin Count 4 | ||
Maximum Forward Voltage Drop 5.3V | ||
Number of Elements per Chip 2 | ||
Diode Technology Silicon Junction | ||
Peak Reverse Recovery Time 218ns | ||
Peak Non-Repetitive Forward Surge Current 350A | ||
- Pays d'origine :
- PH
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Features
Ultrafast recovery time
Ultrasoft recovery
Very low IRRM
Very low Qrr
Reduced radio frequency interference (RFI) and electromagnetic interference (EMI)
Reduced power loss in diode and switching transistor
Reduced snubbing
Ultrasoft recovery
Very low IRRM
Very low Qrr
Reduced radio frequency interference (RFI) and electromagnetic interference (EMI)
Reduced power loss in diode and switching transistor
Reduced snubbing
Diodes and Rectifiers, Vishay Semiconductor
Liens connexes
- Vishay 1200V 120A 4-Pin SOT-227 VS-HFA140FA120
- Infineon 1200V 260A 3-Pin DD260N12KHPSA1
- Infineon 1200V 350A 3-Pin DD350N12KHPSA1
- Vishay 1200V 150A 2-Pin DO-8 VS-150UR120D
- Vishay 1200V 400A 2-Pin DO-205AB VS-400U120D
- Vishay 1200V 16A 2-Pin DO-4 VS-16FR120M
- ROHM 1200V 40A 3-Pin TO-247 SCS240KE2C
- ROHM 1200V 20A 3-Pin TO-247 SCS220KE2C
