SiC MOSFET, 1200 V Wolfspeed CAB450M12XM3
- N° de stock RS:
- 192-3386
- Référence fabricant:
- CAB450M12XM3
- Fabricant:
- Wolfspeed
21 En stock pour livraison sous 1 jour(s)
Ajouté
Prix la pièce
899,68 €
(TVA exclue)
1 088,61 €
(TVA incluse)
| Unité | Prix par unité |
| 1 + | 899,68 € |
- N° de stock RS:
- 192-3386
- Référence fabricant:
- CAB450M12XM3
- Fabricant:
- Wolfspeed
Documentation technique
Législations et de normes
- Pays d'origine :
- US
Détails du produit
High Power Density Footprint
High Temperature (175 °C) Operation
Low Inductance (6.7 nH) Design
Implements Conduction-Optimized Third Generation MOSFET Technology
Terminal Layout Simplifies Bus Bar Design
Integrated Temperature Sensing
Dedicated Drain-Kelvin Pin
Silicon Nitride Insulator and Copper Baseplate
Applications
Motor & Traction Drives
UPS
EV Chargers
High Temperature (175 °C) Operation
Low Inductance (6.7 nH) Design
Implements Conduction-Optimized Third Generation MOSFET Technology
Terminal Layout Simplifies Bus Bar Design
Integrated Temperature Sensing
Dedicated Drain-Kelvin Pin
Silicon Nitride Insulator and Copper Baseplate
Applications
Motor & Traction Drives
UPS
EV Chargers
Spécifications
Attribut | Valeur |
|---|---|
| Maximum Drain Source Voltage | 1200 V |
| Maximum Drain Source Resistance | 4.6 mΩ |
| Maximum Gate Threshold Voltage | 3.6V |
| Minimum Gate Threshold Voltage | 1.8V |
| Maximum Power Dissipation | 50 mW |
| Maximum Gate Source Voltage | -4 V, 19 V |
| Maximum Operating Temperature | +175 °C |
| Length | 80mm |
| Number of Elements per Chip | 1 |
| Transistor Material | SiC |
| Width | 53mm |
| Typical Gate Charge @ Vgs | 1330 nC @ 4/15V |
| Minimum Operating Temperature | -40 °C |
| Height | 15.75mm |