Infineon Low Side 1, Low Side Power Switch IC 8-Pin, PG-TDSO-8
- N° de stock RS:
- 254-7184
- Référence fabricant:
- BTT3050EJXUMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 3000 unités)*
2 286,00 €
(TVA exclue)
2 766,00 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,762 € | 2 286,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 254-7184
- Référence fabricant:
- BTT3050EJXUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Power Switch Type | Low Side | |
| Product Type | Power Switch IC | |
| Power Switch Topology | Low Side | |
| Switch On Resistance RdsOn | 50mΩ | |
| Number of Inputs | 1 | |
| Mount Type | Surface | |
| Minimum Supply Voltage | 3.3V | |
| Package Type | PG-TDSO-8 | |
| Maximum Supply Voltage | 63V | |
| Pin Count | 8 | |
| Maximum Operating Temperature | 150°C | |
| Minimum Operating Temperature | -40°C | |
| Operating Current | 4A | |
| Standards/Approvals | RoHS | |
| Height | 1.15mm | |
| Length | 4.9mm | |
| Series | BTT3050EJ | |
| Automotive Standard | AEC-Q100 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Power Switch Type Low Side | ||
Product Type Power Switch IC | ||
Power Switch Topology Low Side | ||
Switch On Resistance RdsOn 50mΩ | ||
Number of Inputs 1 | ||
Mount Type Surface | ||
Minimum Supply Voltage 3.3V | ||
Package Type PG-TDSO-8 | ||
Maximum Supply Voltage 63V | ||
Pin Count 8 | ||
Maximum Operating Temperature 150°C | ||
Minimum Operating Temperature -40°C | ||
Operating Current 4A | ||
Standards/Approvals RoHS | ||
Height 1.15mm | ||
Length 4.9mm | ||
Series BTT3050EJ | ||
Automotive Standard AEC-Q100 | ||
The Infineons BTT series of a 50 mΩ single channel with a smart low-side power switch within a package providing embedded protective functions. The power transistor is built by a n-channel vertical power MOSFET. It is monolithically integrated, automotive qualified and optimized for 24 V automotive applications.
Overcurrent, active clamping and overtemperature protection
Overtemperature latch shutdown
Supply pin undervoltage protection
Dedicated status signal
Liens connexes
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