STMicroelectronics STDRIVEG611Q High Side 4, High Side Power Switch IC 18-Pin, QFN

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2,58 €

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3,12 €

(TVA incluse)

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Prix par unité
1 - 92,58 €
10 - 992,51 €
100 - 4992,45 €
500 - 9992,39 €
1000 +2,33 €

*Prix donné à titre indicatif

N° de stock RS:
330-240
Référence fabricant:
STDRIVEG611Q
Fabricant:
STMicroelectronics
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Marque

STMicroelectronics

Product Type

Power Switch IC

Power Switch Type

High Side

Power Switch Topology

High Side

Switch On Resistance RdsOn

3.7Ω

Number of Inputs

4

Minimum Supply Voltage

0.3V

Package Type

QFN

Pin Count

18

Maximum Supply Voltage

21V

Operating Current

3.5mA

Maximum Operating Temperature

125°C

Minimum Operating Temperature

-40°C

Height

1mm

Standards/Approvals

RoHS

Length

5mm

Automotive Standard

No

Series

STDRIVEG611

The STMicroelectronics High voltage and high-speed half-bridge gate driver for GaN power switches is a high-voltage half-bridge gate driver for N‑channel Enhancement Mode GaN. The high-side driver section is designed to stand a voltage rail up to 600 V and can be easily supplied by the integrated bootstrap diode. High current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG611 optimized for driving high-speed GaN.

High-side and low-side linear regulators for 6 V gate driving voltage

Fast high-side startup time 5 μs

45 ns propagation delay and 15 ns minimum output pulse

High switching frequency (greater than 1 MHz)

Embedded 600 V bootstrap diode

Full support of GaN hard-switching operation

Comparator for overcurrent detection with Smart Shutdown

UVLO function on VCC, VHS, and VLS

Separated logic inputs and shutdown pin

Fault pin for overcurrent, over temperature and UVLO reporting

Stand-by function for low consumption mode

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