SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0280090D

N° de stock RS:: 915-8842P
Référence fabricant:: C3M0280090D
Fabricant:: Wolfspeed

SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0280090D

670 En stock pour livraison sous 1 jour(s)

Ajouté

Prix l'unité (conditionné en tube)

4,42 €

(TVA exclue)

5,35 €

(TVA incluse)

Unité	Prix par unité
10 - 28	4,42 €
30 - 58	4,29 €
60 - 118	4,195 €
120 +	4,075 €

N° de stock RS:: 915-8842P
Référence fabricant:: C3M0280090D
Fabricant:: Wolfspeed

Documentation technique

Législations et de normes

Pays d'origine :: CN

Détails du produit

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

MOSFET Transistors, Wolfspeed

Spécifications

Attribut	Valeur
Channel Type	N
Maximum Continuous Drain Current	11.5 A
Maximum Drain Source Voltage	900 V
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	360 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	1.8V
Maximum Power Dissipation	54 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +18 V
Length	16.13mm
Transistor Material	SiC
Width	21.1mm
Typical Gate Charge @ Vgs	9.5 nC @ 15 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Forward Diode Voltage	4.8V
Minimum Operating Temperature	-55 °C
Height	5.21mm

N° de stock RS:: 915-8842P
Référence fabricant:: C3M0280090D
Fabricant:: Wolfspeed