N-Channel MOSFET, 98 A, 500 V, 3-Pin PLUS247 IXYS IXFX98N50P3

N° de stock RS:: 802-4506P
Référence fabricant:: IXFX98N50P3
Fabricant:: IXYS

N-Channel MOSFET, 98 A, 500 V, 3-Pin PLUS247 IXYS IXFX98N50P3

Produit discontinué

N° de stock RS:: 802-4506P
Référence fabricant:: IXFX98N50P3
Fabricant:: IXYS

IXFK98N50P3, IXFX98N50P3, Polar3 HiperFET, Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribut	Valeur
Channel Type	N
Maximum Continuous Drain Current	98 A
Maximum Drain Source Voltage	500 V
Series	HiperFET, Polar3
Package Type	PLUS247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	50 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.3 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Typical Gate Charge @ Vgs	197 nC @ 10 V
Number of Elements per Chip	1
Width	5.21mm
Maximum Operating Temperature	+150 °C
Length	16.13mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	21.34mm

N-Channel MOSFET, 98 A, 500 V, 3-Pin PLUS247 IXYS IXFX98N50P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series