N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 Toshiba TK58E06N1

N° de stock RS:: 796-5106
Référence fabricant:: TK58E06N1
Fabricant:: Toshiba

N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 Toshiba TK58E06N1

En cours d'approvisionnement - expédition le 16/10/2024, livraison sous 4 jour(s)

Prix L'unité (en paquet de 5)

1,244 €

(TVA exclue)

1,505 €

(TVA incluse)

Unité	Prix par unité	le paquet*
5 +	1,244 €	6,22 €
*prix conseillé

N° de stock RS:: 796-5106
Référence fabricant:: TK58E06N1
Fabricant:: Toshiba

TK58E06N1, Silicon N-channel MOSFET (U-MOSVIII-H) Data Sheet
ESD Control Selection Guide V1

N° de stock RS:: 796-5106
Référence fabricant:: TK58E06N1
Fabricant:: Toshiba

TK58E06N1, Silicon N-channel MOSFET (U-MOSVIII-H) Data Sheet
ESD Control Selection Guide V1

Attribut	Valeur
Channel Type	N
Maximum Continuous Drain Current	105 A
Maximum Drain Source Voltage	60 V
Package Type	TO-220
Series	TK
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	5.4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Maximum Power Dissipation	110 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Typical Gate Charge @ Vgs	46 nC @ 10 V
Number of Elements per Chip	1
Width	4.45mm
Length	10.16mm
Height	15.1mm

Attribut	Valeur
Channel Type	N
Maximum Continuous Drain Current	105 A
Maximum Drain Source Voltage	60 V
Package Type	TO-220
Series	TK
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	5.4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Maximum Power Dissipation	110 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Typical Gate Charge @ Vgs	46 nC @ 10 V
Number of Elements per Chip	1
Width	4.45mm
Length	10.16mm
Height	15.1mm