N-Channel MOSFET, 100 A, 500 V, 3-Pin TO-264 onsemi FDL100N50F
- N° de stock RS:
- 759-9128P
- Référence fabricant:
- FDL100N50F
- Fabricant:
- onsemi
220 En stock pour livraison sous 1 jour(s)
Prix l'unité (conditionné en tube)
14,71 €
(TVA exclue)
17,80 €
(TVA incluse)
| Unité | Prix par unité |
| 13 + | 14,71 € |
- N° de stock RS:
- 759-9128P
- Référence fabricant:
- FDL100N50F
- Fabricant:
- onsemi
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Attribut | Valeur |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 500 V |
| Series | UniFET |
| Package Type | TO-264 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 55 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 2.5 kW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 238 nC @ 10 V |
| Transistor Material | Si |
| Width | 5mm |
| Length | 20mm |
| Minimum Operating Temperature | -55 °C |
| Height | 20mm |
- N° de stock RS:
- 759-9128P
- Référence fabricant:
- FDL100N50F
- Fabricant:
- onsemi
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Attribut | Valeur |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 500 V |
| Series | UniFET |
| Package Type | TO-264 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 55 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 2.5 kW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 238 nC @ 10 V |
| Transistor Material | Si |
| Width | 5mm |
| Length | 20mm |
| Minimum Operating Temperature | -55 °C |
| Height | 20mm |