N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Infineon 2N7002H6327XTSA2
- N° de stock RS:
- 752-7773P
- Référence fabricant:
- 2N7002H6327XTSA2
- Fabricant:
- Infineon
74000 En stock pour livraison sous 1 jour(s)
Ajouté
Prix l'unité (conditionné en bobine) Pour une quantité inférieure à 150, la livraison s'effectuera en bande
0,078 €
(TVA exclue)
0,094 €
(TVA incluse)
| Unité | Prix par unité |
| 1000 - 2400 | 0,078 € |
| 2500 - 4900 | 0,075 € |
| 5000 - 9900 | 0,072 € |
| 10000 + | 0,067 € |
- N° de stock RS:
- 752-7773P
- Référence fabricant:
- 2N7002H6327XTSA2
- Fabricant:
- Infineon
Documentation technique
Législations et de normes
Détails du produit
Infineon OptiMOS™ Small Signal MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Spécifications
Attribut | Valeur |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 300 mA |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-23 |
| Series | OptiMOS |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 4 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 500 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Length | 2.9mm |
| Width | 1.3mm |
| Typical Gate Charge @ Vgs | 0.4 nC @ 10 V |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Height | 1mm |
- N° de stock RS:
- 752-7773P
- Référence fabricant:
- 2N7002H6327XTSA2
- Fabricant:
- Infineon