P-Channel MOSFET, 1.1 A, 60 V, 4-Pin HVMDIP Vishay IRFD9014PBF

N° de stock RS:: 541-0733P
Référence fabricant:: IRFD9014PBF
Fabricant:: Vishay

P-Channel MOSFET, 1.1 A, 60 V, 4-Pin HVMDIP Vishay IRFD9014PBF

2504 En stock pour livraison sous 1 jour(s)

Prix l’unité (livré sous forme de ruban)

0,62 €

(TVA exclue)

0,75 €

(TVA incluse)

Unité	Prix par unité
5 - 9	0,62 €
10 - 24	0,59 €
25 - 49	0,56 €
50 +	0,52 €

N° de stock RS:: 541-0733P
Référence fabricant:: IRFD9014PBF
Fabricant:: Vishay

IRFD9014PBF Data Sheet
ESD Control Selection Guide V1

N° de stock RS:: 541-0733P
Référence fabricant:: IRFD9014PBF
Fabricant:: Vishay

IRFD9014PBF Data Sheet
ESD Control Selection Guide V1

Attribut	Valeur
Channel Type	P
Maximum Continuous Drain Current	1.1 A
Maximum Drain Source Voltage	60 V
Package Type	HVMDIP
Mounting Type	Through Hole
Pin Count	4
Maximum Drain Source Resistance	500 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	1.3 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	6.29mm
Length	5mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	12 nC @ 10 V
Transistor Material	Si
Height	3.37mm
Minimum Operating Temperature	-55 °C

Attribut	Valeur
Channel Type	P
Maximum Continuous Drain Current	1.1 A
Maximum Drain Source Voltage	60 V
Package Type	HVMDIP
Mounting Type	Through Hole
Pin Count	4
Maximum Drain Source Resistance	500 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	1.3 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	6.29mm
Length	5mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	12 nC @ 10 V
Transistor Material	Si
Height	3.37mm
Minimum Operating Temperature	-55 °C

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