N-Channel MOSFET, 400 V DPAK Microchip TN2640K4-G
- N° de stock RS:
- 264-8923
- Référence fabricant:
- TN2640K4-G
- Fabricant:
- Microchip
1996 En stock pour livraison sous 4 jour(s)
Ajouté
Prix L'unité (en paquet de 2)
2,645 €
(TVA exclue)
3,20 €
(TVA incluse)
| Unité | Prix par unité | le paquet* |
| 2 - 48 | 2,645 € | 5,29 € |
| 50 - 98 | 2,215 € | 4,43 € |
| 100 - 248 | 1,99 € | 3,98 € |
| 250 - 998 | 1,955 € | 3,91 € |
| 1000 + | 1,915 € | 3,83 € |
| *prix conseillé | ||
- N° de stock RS:
- 264-8923
- Référence fabricant:
- TN2640K4-G
- Fabricant:
- Microchip
Documentation technique
Législations et de normes
Détails du produit
The Microchip N-Channel low threshold enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold (2.0V max.)
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Spécifications
Attribut | Valeur |
|---|---|
| Channel Type | N |
| Maximum Drain Source Voltage | 400 V |
| Package Type | DPAK |
| Mounting Type | Through Hole |