N-Channel MOSFET, 30 A, 1200 V, 7-Pin D2PAK onsemi NTBG080N120SC1
- N° de stock RS:
- 205-2450
- Référence fabricant:
- NTBG080N120SC1
- Fabricant:
- onsemi
760 En stock pour livraison sous 1 jour(s)
Ajouté
Prix la pièce
11,77 €
(TVA exclue)
14,24 €
(TVA incluse)
| Unité | Prix par unité |
| 1 - 9 | 11,77 € |
| 10 - 99 | 10,14 € |
| 100 - 249 | 10,02 € |
| 250 - 499 | 9,88 € |
| 500 + | 9,54 € |
- N° de stock RS:
- 205-2450
- Référence fabricant:
- NTBG080N120SC1
- Fabricant:
- onsemi
Documentation technique
Législations et de normes
Détails du produit
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L
The ON Semiconductor silicon carbide (SiC) N-Channel MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Low on resistance 80mohm type
High Junction temperature
Ultra low gate charge
Low effective output capacitance
High Junction temperature
Ultra low gate charge
Low effective output capacitance
Spécifications
Attribut | Valeur |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 7 |
| Maximum Drain Source Resistance | 110 mΩ |
| Maximum Gate Threshold Voltage | 4.3V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |