- N° de stock RS:
- 201-2810
- Référence fabricant:
- FF6MR12W2M1B11BOMA1
- Fabricant:
- Infineon
Produit discontinué
- N° de stock RS:
- 201-2810
- Référence fabricant:
- FF6MR12W2M1B11BOMA1
- Fabricant:
- Infineon
Documentation technique
Législations et de normes
Détails du produit
The Infineon 6 mO, 1200 V half bridge module with Silicon Carbide MOSFET, It has NTC temperature sensor and PressFIT contact technology. It is also available with thermal interface material.
High current density
Low inductive design
Low switching losses
RoHS-compliant modules
Low inductive design
Low switching losses
RoHS-compliant modules
Spécifications
Attribut | Valeur |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 200 A |
Maximum Drain Source Voltage | 1200 V |
Package Type | AG-EASY2B |
Mounting Type | Screw Mount |
Maximum Drain Source Resistance | 0.00825 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5.55V |
Transistor Material | SiC |
Number of Elements per Chip | 2 |
Series | CoolSiC |
- N° de stock RS:
- 201-2810
- Référence fabricant:
- FF6MR12W2M1B11BOMA1
- Fabricant:
- Infineon