SiC N-Channel MOSFET, 30 A, 1200 V, 4-Pin TO-247-4 Wolfspeed C3M0075120K
- N° de stock RS:
- 192-3519
- Référence fabricant:
- C3M0075120K
- Fabricant:
- Wolfspeed
24 En stock pour livraison sous 1 jour(s)
Prix la pièce
18,63 €
(TVA exclue)
22,54 €
(TVA incluse)
Unité | Prix par unité |
|---|---|
| 1 + | 18,63 € |
- N° de stock RS:
- 192-3519
- Référence fabricant:
- C3M0075120K
- Fabricant:
- Wolfspeed
- Pays d'origine :
- CN
Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology in new low inductance discrete packing. The newly released packages allow engineers to take full advantage of the high-frequency capability of the latest C3MTM planar MOSFET chips. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers.
Minimum of 1200V Vbr across entire operating temperature range
New low-impedance package with driver source
> 8mm of creepage/clearance between drain and source
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
New low-impedance package with driver source
> 8mm of creepage/clearance between drain and source
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
Attribut | Valeur |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | TO-247-4 |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 75 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.6V |
| Minimum Gate Threshold Voltage | 1.8V |
| Maximum Power Dissipation | 113.6 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, 19 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 53 nC @ 4/15V |
| Length | 16.13mm |
| Transistor Material | SiC |
| Maximum Operating Temperature | +150 °C |
| Width | 5.21mm |
| Height | 23.6mm |
| Minimum Operating Temperature | -55 °C |
- N° de stock RS:
- 192-3519
- Référence fabricant:
- C3M0075120K
- Fabricant:
- Wolfspeed
- Pays d'origine :
- CN
Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology in new low inductance discrete packing. The newly released packages allow engineers to take full advantage of the high-frequency capability of the latest C3MTM planar MOSFET chips. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers.
Minimum of 1200V Vbr across entire operating temperature range
New low-impedance package with driver source
> 8mm of creepage/clearance between drain and source
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
New low-impedance package with driver source
> 8mm of creepage/clearance between drain and source
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
Attribut | Valeur |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | TO-247-4 |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 75 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.6V |
| Minimum Gate Threshold Voltage | 1.8V |
| Maximum Power Dissipation | 113.6 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, 19 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 53 nC @ 4/15V |
| Length | 16.13mm |
| Transistor Material | SiC |
| Maximum Operating Temperature | +150 °C |
| Width | 5.21mm |
| Height | 23.6mm |
| Minimum Operating Temperature | -55 °C |