N-Channel MOSFET, 6.5 A, 20 V, 8-Pin TSMT ROHM RQ1C065UNTR
- N° de stock RS:
- 172-0527
- Référence fabricant:
- RQ1C065UNTR
- Fabricant:
- ROHM
En stock pour livraison sous 3 à 5 jours.
Prix L'unité (en paquet de 50)
0,41 €
(TVA exclue)
0,50 €
(TVA incluse)
| Unité | Prix par unité | le paquet* |
| 50 - 450 | 0,41 € | 20,50 € |
| 500 - 700 | 0,307 € | 15,35 € |
| 750 - 1450 | 0,279 € | 13,95 € |
| 1500 - 2450 | 0,26 € | 13,00 € |
| 2500 + | 0,254 € | 12,70 € |
| *prix conseillé | ||
- N° de stock RS:
- 172-0527
- Référence fabricant:
- RQ1C065UNTR
- Fabricant:
- ROHM
Documentation technique
Législations et de normes
Détails du produit
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
Low voltage(1.5V) drive type
Nch Small-signal MOSFET
Small Surface Mount Package
Pb Free
Nch Small-signal MOSFET
Small Surface Mount Package
Pb Free
Spécifications
Attribut | Valeur |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 6.5 A |
| Maximum Drain Source Voltage | 20 V |
| Series | RQ1C065UN |
| Package Type | TSMT |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 58 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 0.3V |
| Maximum Power Dissipation | 1.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±10 V |
| Length | 3.1mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Width | 2.5mm |
| Typical Gate Charge @ Vgs | 11 nC @ 4.5 V |
| Forward Diode Voltage | 1.2V |
| Height | 0.8mm |
- N° de stock RS:
- 172-0527
- Référence fabricant:
- RQ1C065UNTR
- Fabricant:
- ROHM