SiC N-Channel MOSFET, 35 A, 1000 V, 4-Pin TO-247-4 Wolfspeed C3M0065100K

New C3M Silicon Carbide (SiC) MOSFET technology
Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range
New low-impedance package with driver source
8 mm of creepage/clearance between Drain and Source
High-speed switching with low output capacitance
High blocking voltage with low Drain-Source On-State Resistance
Avalanche ruggedness
Fast intrinsic diode with low Reverse Recovery

MOSFET Transistors, Cree Inc.