- N° de stock RS:
- 162-3304P
- Référence fabricant:
- IRLML2502TRPBF
- Fabricant:
- International Rectifier
91580 En stock pour livraison sous 1 jour(s)
Ajouté
Prix l'unité (conditionné en bobine) Pour une quantité inférieure à 150, la livraison s'effectuera en bande
0,247 €
(TVA exclue)
0,299 €
(TVA incluse)
Unité | Prix par unité |
200 - 480 | 0,247 € |
500 - 980 | 0,23 € |
1000 - 1980 | 0,148 € |
2000 + | 0,115 € |
- N° de stock RS:
- 162-3304P
- Référence fabricant:
- IRLML2502TRPBF
- Fabricant:
- International Rectifier
Documentation technique
Législations et de normes
Non conforme
Détails du produit
N-Channel Power MOSFET 12V to 25V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package
Industry-standard pinout SOT-23 Package
Compatible with Existing Surface Mount Techniques Halogen-Free
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Compatible with Existing Surface Mount Techniques Halogen-Free
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Spécifications
Attribut | Valeur |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 4.2 A |
Maximum Drain Source Voltage | 20 V |
Series | IRLML2502 |
Package Type | SOT-23 |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 80 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 1.2V |
Minimum Gate Threshold Voltage | 0.6V |
Maximum Power Dissipation | 1.25 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±12 V |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 8 nC @ 5 V |
Length | 3.04mm |
Maximum Operating Temperature | +150 °C |
Width | 1.4mm |
Forward Diode Voltage | 1.2V |
Minimum Operating Temperature | -55 °C |
Height | 1.02mm |
- N° de stock RS:
- 162-3304P
- Référence fabricant:
- IRLML2502TRPBF
- Fabricant:
- International Rectifier