SiC N-Channel MOSFET, 60 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0040120D

N° de stock RS:: 145-5875
Référence fabricant:: C2M0040120D
Fabricant:: Wolfspeed

SiC N-Channel MOSFET, 60 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0040120D

210 En stock pour livraison sous 1 jour(s)

Ajouté

Prix L'unité (dans un tube de 30)

42,089 €

(TVA exclue)

50,928 €

(TVA incluse)

Unité	Prix par unité	le tube*
30 +	42,089 €	1 262,67 €
*prix conseillé

N° de stock RS:: 145-5875
Référence fabricant:: C2M0040120D
Fabricant:: Wolfspeed

Documentation technique

Législations et de normes

Pays d'origine :: CN

Détails du produit

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

MOSFET Transistors, Wolfspeed

Spécifications

Attribut	Valeur
Channel Type	N
Maximum Continuous Drain Current	60 A
Maximum Drain Source Voltage	1200 V
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	52 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	330 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-5 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	115 nC @ 20 V, 115 nC @ 5 V
Length	16.13mm
Transistor Material	SiC
Width	5.21mm
Forward Diode Voltage	3.3V
Height	21.1mm
Minimum Operating Temperature	-55 °C

N° de stock RS:: 145-5875
Référence fabricant:: C2M0040120D
Fabricant:: Wolfspeed