- N° de stock RS:
- 124-1694
- Référence fabricant:
- BSS138
- Fabricant:
- onsemi
3000 En stock pour livraison sous 1 jour(s)
Ajouté
Prix L'unité (sur une bobine de 3000)
0,049 €
(TVA exclue)
0,059 €
(TVA incluse)
Unité | Prix par unité | la bobine* |
3000 - 12000 | 0,049 € | 147,00 € |
15000 + | 0,048 € | 144,00 € |
*prix conseillé |
- N° de stock RS:
- 124-1694
- Référence fabricant:
- BSS138
- Fabricant:
- onsemi
Documentation technique
Législations et de normes
Détails du produit
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchilds proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Spécifications
Attribut | Valeur |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 220 mA |
Maximum Drain Source Voltage | 50 V |
Package Type | SOT-23 |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 3.5 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 1.5V |
Minimum Gate Threshold Voltage | 0.8V |
Maximum Power Dissipation | 360 mW |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Width | 1.3mm |
Typical Gate Charge @ Vgs | 1.7 nC @ 10 V |
Length | 2.92mm |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Height | 0.93mm |
Minimum Operating Temperature | -55 °C |
- N° de stock RS:
- 124-1694
- Référence fabricant:
- BSS138
- Fabricant:
- onsemi