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MOSFETs
N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXYS IXFP10N80P
N° de stock RS:
194-057P
Référence fabricant:
IXFP10N80P
Fabricant:
IXYS
Voir la catégorie
35 En stock pour livraison sous 1
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Prix l'unité (conditionné en tube)
2,47 €
(TVA exclue)
2,99 €
(TVA incluse)
Unité
Prix par unité
1 +
2,47 €
Options de conditionnement :
Conditionnement standard
Conditionnement industriel standard
N° de stock RS:
194-057P
Référence fabricant:
IXFP10N80P
Fabricant:
IXYS
Documentation technique
Législations et de normes
Détails du produit
Spécifications
IXFP 10N80P PolarHV HiPerFET Power MOSFET Data Sheet
ESD Control Selection Guide V1
Déclaration de conformité RoHS
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Attribut
Valeur
Channel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
800 V
Package Type
TO-220
Series
HiperFET, Polar
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.66mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
40 nC @ 10 V
Width
4.83mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.15mm
N° de stock RS:
194-057P
Référence fabricant:
IXFP10N80P
Fabricant:
IXYS
Documentation technique
Législations et de normes
Détails du produit
Spécifications
IXFP 10N80P PolarHV HiPerFET Power MOSFET Data Sheet
ESD Control Selection Guide V1
Déclaration de conformité RoHS
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Attribut
Valeur
Channel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
800 V
Package Type
TO-220
Series
HiperFET, Polar
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.66mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
40 nC @ 10 V
Width
4.83mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.15mm