STMicroelectronics STGAP3SXS Motor Driver Development Module
- N° de stock RS:
- 277-653P
- Référence fabricant:
- STGAP3SXSTR
- Fabricant:
- STMicroelectronics
Sous-total 1 unité (conditionné en ruban)*
3,90 €
(TVA exclue)
4,72 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 190 unité(s) expédiée(s) à partir du 27 juillet 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 + | 3,90 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 277-653P
- Référence fabricant:
- STGAP3SXSTR
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | Microcontroller Development Tool | |
| Kit Classification | Development Module | |
| Kit Name | STGAP3SXS | |
| Technology | Motor Driver | |
| Standards/Approvals | RoHS | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type Microcontroller Development Tool | ||
Kit Classification Development Module | ||
Kit Name STGAP3SXS | ||
Technology Motor Driver | ||
Standards/Approvals RoHS | ||
- Pays d'origine :
- IT
The STMicroelectronics Galvanically isolated Protected single gate drivers that provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry. The platform includes different options with 10 A and 6 A current capability, each of which is available with dedicated UVLO variants for SiC MOSFETs and IGBTs. Ultrafast desaturation protection is also available with differentiated intervention thresholds.
High voltage rail up to 1200 V
75 ns input output propagation delay
Miller CLAMP driver for external N channel MOSFET
Adjustable soft turn off function
VH UVLO IGBT and SiC variants
Desaturation protection IGBT and SiC variants
Gate driving voltage up to 32 V
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