Infineon IGW15T120FKSA1, Type N-Channel Power Semiconductor, 30 A 1200 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 914-0211
- Référence fabricant:
- IGW15T120FKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 4 unités)*
18,14 €
(TVA exclue)
21,948 €
(TVA incluse)
Ajouter 20 unités pour bénéficier d'une livraison gratuite
Temporairement en rupture de stock
- Expédition à partir du 26 avril 2027
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 4 - 16 | 4,535 € | 18,14 € |
| 20 - 36 | 4,308 € | 17,23 € |
| 40 - 96 | 4,128 € | 16,51 € |
| 100 - 196 | 3,855 € | 15,42 € |
| 200 + | 3,63 € | 14,52 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 914-0211
- Référence fabricant:
- IGW15T120FKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current Ic | 30A | |
| Product Type | Power Semiconductor | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 110W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC1, Pb-free lead plating, RoHS | |
| Series | TrenchStop | |
| Energy Rating | 4.1mJ | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current Ic 30A | ||
Product Type Power Semiconductor | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 110W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.2V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC1, Pb-free lead plating, RoHS | ||
Series TrenchStop | ||
Energy Rating 4.1mJ | ||
Automotive Standard No | ||
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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