Toshiba GT30J341,Q(O IGBT, 59 A 600 V, 3-Pin TO-3P, Through Hole
- N° de stock RS:
- 891-2734P
- Référence fabricant:
- GT30J341,Q(O
- Fabricant:
- Toshiba
Indisponible
RS n'aura plus ce produit en stock.
- N° de stock RS:
- 891-2734P
- Référence fabricant:
- GT30J341,Q(O
- Fabricant:
- Toshiba
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Toshiba | |
| Maximum Continuous Collector Current | 59 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±25V | |
| Maximum Power Dissipation | 230 W | |
| Package Type | TO-3P | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 0.4µs | |
| Transistor Configuration | Single | |
| Dimensions | 15.5 x 4.5 x 20mm | |
| Gate Capacitance | 2900pF | |
| Energy Rating | 0.8mJ | |
| Maximum Operating Temperature | +175 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque Toshiba | ||
Maximum Continuous Collector Current 59 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±25V | ||
Maximum Power Dissipation 230 W | ||
Package Type TO-3P | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 0.4µs | ||
Transistor Configuration Single | ||
Dimensions 15.5 x 4.5 x 20mm | ||
Gate Capacitance 2900pF | ||
Energy Rating 0.8mJ | ||
Maximum Operating Temperature +175 °C | ||
- Pays d'origine :
- JP