onsemi FGA30N120FTDTU IGBT, 60 A 1200 V, 3-Pin TO-3PN, Through Hole

Voir l’ensemble des IGBTs
Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
864-8776
Référence fabricant:
FGA30N120FTDTU
Fabricant:
onsemi
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Marque

onsemi

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

339 W

Package Type

TO-3PN

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.8 x 5 x 20.1mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Discrete IGBTs, 1000V and over, Fairchild Semiconductor



IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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