onsemi HGTG30N60B3 IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

Voir l’ensemble des IGBTs
Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
807-6664
Référence fabricant:
HGTG30N60B3
Fabricant:
onsemi
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Marque

onsemi

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

208 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.87 x 4.82 x 20.82mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Discrete IGBTs, Fairchild Semiconductor



IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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