STMicroelectronics STGW20H60DF, Type N-Channel IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole

Voir l’ensemble des IGBTs
Actuellement indisponible
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Options de conditionnement :
N° de stock RS:
792-5798
Référence fabricant:
STGW20H60DF
Fabricant:
STMicroelectronics
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Marque

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

40A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

167W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Operating Temperature

175°C

Series

Trench Gate Field Stop

Standards/Approvals

RoHS

Height

20.15mm

Automotive Standard

No

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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