Infineon IRG4PF50WDPBF IGBT, 51 A 900 V, 3-Pin TO-247AC, Through Hole

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N° de stock RS:
541-2076
Référence fabricant:
IRG4PF50WDPBF
Fabricant:
Infineon
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Marque

Infineon

Maximum Continuous Collector Current

51 A

Maximum Collector Emitter Voltage

900 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-247AC

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.9 x 5.3 x 20.3mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Co-Pack IGBT over 21A, Infineon


Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations


IGBT Transistors, International Rectifier


International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

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