onsemi IGBT 650 V, 3-Pin TO-247-4LD, Surface
- N° de stock RS:
- 241-0729
- Référence fabricant:
- FGHL50T65MQDTL4
- Fabricant:
- onsemi
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 241-0729
- Référence fabricant:
- FGHL50T65MQDTL4
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 268W | |
| Package Type | TO-247-4LD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 20.82 mm | |
| Length | 15.87mm | |
| Height | 4.82mm | |
| Standards/Approvals | RoHS | |
| Series | FGHL50T65MQDT | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 268W | ||
Package Type TO-247-4LD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 20.82 mm | ||
Length 15.87mm | ||
Height 4.82mm | ||
Standards/Approvals RoHS | ||
Series FGHL50T65MQDT | ||
Automotive Standard No | ||
The ON Semiconductor 650 V, 50 A FS4 medium switching speed IGBT. This offer the optimum performance by balancing Vce(sat) and Eoff losses and well controllable turnoff Vce overshoot. Well suited for solar inverter, UPS, EV charging stations, ESS and other high performance power conversion applications.
Positive temperature co-efficient
Easy paralleling operation
Low switching losses
Low conduction losses
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