STMicroelectronics IGBT, 6 A 600 V, 26-Pin, Through Hole

Voir l’ensemble des IGBTs
Offre groupée disponible

Sous-total 5 unités (conditionné en tube)*

41,45 €

(TVA exclue)

50,15 €

(TVA incluse)

Add to Basket
sélectionner ou taper la quantité
Temporairement en rupture de stock
  • Expédition à partir du 03 novembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité
Prix par unité
5 +8,29 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
218-4825P
Référence fabricant:
STGIPQ4C60T-HZ
Fabricant:
STMicroelectronics
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

STMicroelectronics

Maximum Continuous Collector Current Ic

6A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

12.5W

Mount Type

Through Hole

Pin Count

26

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

600 V

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Operating Temperature

175°C

Height

4.2mm

Series

SLLIMM 2nd

Length

32.5mm

Standards/Approvals

RoHS

Automotive Standard

No

SLLIMM nano 2nd series IPM, 3-phase inverter, 6 A, 600 V, short-circuit rugged IGBT


This second series of SLLIMM (small low-loss intelligent molded module) nano provides a compact, high-performance AC motor drive in a simple, rugged design. It is composed of six improved short-circuit rugged trench gate fieldstop IGBTs with freewheeling diodes and three half-bridge HVICs for gate driving, providing low electromagnetic interference (EMI) characteristics with optimized switching speed. The package is designed to allow a better and more easily screwed-on heat sink, and is optimized for thermal performance and compactness in built-in motor applications or other low power applications where assembly space is limited. This IPM includes a completely uncommitted operational amplifier and a comparator that can be used to design a fast and efficient protection circuit.

  • IPM 6 A, 600 V, 3-phase IGBT inverter bridge including 3 control ICs for gate driving and freewheeling diodes

  • 3.3 V, 5 V, 15 V TTL/CMOS input comparators with hysteresis and pull-down/pull-up resistors

  • Internal bootstrap diode

  • Optimized for low electromagnetic interference

  • Undervoltage lockout

  • Short-circuit rugged TFS IGBT

  • Shutdown function

  • Interlocking function

  • Op-amp for advanced current sensing

  • Comparator for fault protection against overcurrent

  • Isolation ratings of 1500 Vrms/min.

  • NTC (UL 1434 CA 2 and 4)

  • Up to ±2 kV ESD protection (HBM C = 100 pF, R = 1.5 kΩ)

  • UL recognition: UL 1557, file E81734