Infineon FF1800R12IE5PBPSA1 Dual IGBT Module, 1.8 kA 1200 V, 10-Pin PRIME3+
- N° de stock RS:
- 218-4331
- Référence fabricant:
- FF1800R12IE5PBPSA1
- Fabricant:
- Infineon
Sous-total (1 unité)*
888,02 €
(TVA exclue)
1 074,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 09 avril 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 + | 888,02 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 218-4331
- Référence fabricant:
- FF1800R12IE5PBPSA1
- Fabricant:
- Infineon
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Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current | 1.8 kA | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Maximum Power Dissipation | 20 mW | |
| Number of Transistors | 2 | |
| Configuration | Dual | |
| Package Type | PRIME3+ | |
| Channel Type | N | |
| Pin Count | 10 | |
| Transistor Configuration | Dual | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current 1.8 kA | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage 20V | ||
Maximum Power Dissipation 20 mW | ||
Number of Transistors 2 | ||
Configuration Dual | ||
Package Type PRIME3+ | ||
Channel Type N | ||
Pin Count 10 | ||
Transistor Configuration Dual | ||
The Infineon PrimePack dual IGBT module with TRENCHSTOP IGBT5 and .XT interconnection technology. It has collector emitter voltage of 1800 V. The N-Channel TRENCHSTOP and field stop IGBT Modules are suitable for hard switching and soft switching applications such as high power converters, UPS system, motor drives and solar applications.
Copper bonds for high current carrying capabilities
Sintering of chips for highest power cycling capabilities
Total losses reduced by up to 20%
Less cooling effort for same output power
Enables higher system overload conditions
Sintering of chips for highest power cycling capabilities
Total losses reduced by up to 20%
Less cooling effort for same output power
Enables higher system overload conditions
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