Renesas Electronics RJH65T04BDPM-A0#T2, P-Channel IGBT, 60 A 650 V, 3-Pin TO-3PFP, Through Hole
- N° de stock RS:
- 168-2480P
- Référence fabricant:
- RJH65T04BDPM-A0#T2
- Fabricant:
- Renesas Electronics
Indisponible
RS n'aura plus ce produit en stock.
- N° de stock RS:
- 168-2480P
- Référence fabricant:
- RJH65T04BDPM-A0#T2
- Fabricant:
- Renesas Electronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Renesas Electronics | |
| Maximum Continuous Collector Current | 60 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±30V | |
| Maximum Power Dissipation | 65 W | |
| Number of Transistors | 1 | |
| Package Type | TO-3PFP | |
| Mounting Type | Through Hole | |
| Channel Type | P | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Dimensions | 15.5 x 5.5 x 26.5mm | |
| Maximum Operating Temperature | +175 °C | |
| Energy Rating | 1.1mJ | |
| Gate Capacitance | 1760pF | |
| Sélectionner tout | ||
|---|---|---|
Marque Renesas Electronics | ||
Maximum Continuous Collector Current 60 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±30V | ||
Maximum Power Dissipation 65 W | ||
Number of Transistors 1 | ||
Package Type TO-3PFP | ||
Mounting Type Through Hole | ||
Channel Type P | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Dimensions 15.5 x 5.5 x 26.5mm | ||
Maximum Operating Temperature +175 °C | ||
Energy Rating 1.1mJ | ||
Gate Capacitance 1760pF | ||
IGBT product series for Power Factor Correction (PFC), UPS, solar power generation, and welding applications, recommended for 50 to 100 kHz frequencies, and not guaranteed against short circuit.
Low collector to emitter saturation voltage
VCE(sat) = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V, IC = 30 A, Rg = 10 , Ta=25°C , inductive load)
Operation frequency (20kHz ≤ f ˂ 40kHz)
VCE(sat) = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V, IC = 30 A, Rg = 10 , Ta=25°C , inductive load)
Operation frequency (20kHz ≤ f ˂ 40kHz)