IXYS IXXK110N65B4H1, N-Channel IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole
- N° de stock RS:
- 125-8051
- Référence fabricant:
- IXXK110N65B4H1
- Fabricant:
- IXYS
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
21,66 €
(TVA exclue)
26,21 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 273 unité(s) expédiée(s) à partir du 15 octobre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 1 | 21,66 € |
| 2 - 4 | 19,43 € |
| 5 - 9 | 18,46 € |
| 10 - 24 | 17,57 € |
| 25 + | 16,66 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 125-8051
- Référence fabricant:
- IXXK110N65B4H1
- Fabricant:
- IXYS
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | IXYS | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 570A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 880W | |
| Package Type | TO-264 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 30kHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Series | Trench | |
| Automotive Standard | No | |
| Energy Rating | 3mJ | |
| Sélectionner tout | ||
|---|---|---|
Marque IXYS | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 570A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 880W | ||
Package Type TO-264 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 30kHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Series Trench | ||
Automotive Standard No | ||
Energy Rating 3mJ | ||
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Liens connexes
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