Infineon IKY75N120CH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 75 A 1200 V, 4-Pin

Voir l’ensemble des IGBTs
Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
285-026
Référence fabricant:
IKY75N120CH7XKSA1
Fabricant:
Infineon
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Marque

Infineon

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

549 W

Number of Transistors

1

Package Type

PG-TO247-4-PLUS-NN5.1

Configuration

Single Collector, Single Emitter, Single Gate

Mounting Type

Through Hole

Channel Type

N

Pin Count

4

The Infineon IGBT features an advanced high speed 1200V TRENCHSTOP IGBT 7 technology device delivers exceptional performance, optimised for high efficiency in challenging applications such as industrial UPS, EV charging, and welding. Designed to cope with a maximum junction temperature of 175°C, this component ensures minimal energy loss and improved thermal management, thus prolonging operational lifespan. Its robust construction includes lead free plating, adhering to RoHS compliance, ensuring environmental responsibility. With highly efficient current handling capabilities of up to 75A, this IGBT is developed to perform under demanding conditions while promoting enhanced system efficiency.

High speed switching enhances performance
Optimized for efficient hard switching
Built in rapid recovery diode improves reliability
Pb free lead plating meets environmental standards
Handles high junction temperatures for durability
User friendly design enables easy paralleling