Infineon IKY50N120CH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 75 A 1200 V, 4-Pin

Voir l’ensemble des IGBTs
Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
285-025
Référence fabricant:
IKY50N120CH7XKSA1
Fabricant:
Infineon
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Marque

Infineon

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

398 W

Configuration

Single Collector, Single Emitter, Single Gate

Package Type

PG-TO247-4-PLUS-NN5.1

Mounting Type

Through Hole

Channel Type

N

Pin Count

4

The Infineon IGBT is engineered for optimal performance in demanding applications. The robust design features advanced soft commutation capabilities, ensuring minimal switching losses and increased efficiency. This product excels in environments requiring quick recovery times, making it ideal for industrial applications. With its seamless integration of low Qrr diode characteristics, it delivers consistent and reliable power management. Its superior thermal performance and low saturation voltage at elevated temperatures ensure reliability for long term use. This device is perfect for applications such as UPS systems, electric vehicle charging, and string inverters, reflecting its versatility in the modern marketplace.

Best in class efficiency for hard switching
Low emitter rapid diode enhances performance
Pb free lead plating meets RoHS standards
Engineered for easy parallel connection
Qualified for industrial applications per JEDEC
Optimised for thermal management and compact design