Infineon FF600R12KE7EHPSA1 Single Collector, Single Emitter, Single Gate IGBT, 600 A 1200 V, 3-Pin AG-62MMHB, Through
- N° de stock RS:
- 284-965
- Référence fabricant:
- FF600R12KE7EHPSA1
- Fabricant:
- Infineon
Indisponible
RS n'aura plus ce produit en stock.
- N° de stock RS:
- 284-965
- Référence fabricant:
- FF600R12KE7EHPSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current | 600 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 2 | |
| Configuration | Single Collector, Single Emitter, Single Gate | |
| Package Type | AG-62MMHB | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current 600 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 2 | ||
Configuration Single Collector, Single Emitter, Single Gate | ||
Package Type AG-62MMHB | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
The Infineon IGBT Module is a 62 mm 1200 V, 600 A dual low saturation and fast trench IGBT module with TRENCHSTOP IGBT7 and emitter controlled diode. Existing packages with higher current capability, allows to increase inverter output power with same frame size. Reduced system costs by simplification of the inverter systems.
Highest power density
Best in class VCEsat
High creepage and clearance distances
Isolated base plate
Standard housing
RoHS compliant
4 kV AC 1 min Insulation
Best in class VCEsat
High creepage and clearance distances
Isolated base plate
Standard housing
RoHS compliant
4 kV AC 1 min Insulation