Infineon F3L225R12W3H3B11BPSA1, Type N-Channel Single Collector IGBT, 180 A 1200 V AG-62MMHB, Through Hole
- N° de stock RS:
- 284-664
- Référence fabricant:
- F3L225R12W3H3B11BPSA1
- Fabricant:
- Infineon
Sous-total (1 plateau de 8 unités)*
883,064 €
(TVA exclue)
1 068,504 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 8 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le plateau* |
|---|---|---|
| 8 + | 110,383 € | 883,06 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 284-664
- Référence fabricant:
- F3L225R12W3H3B11BPSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current Ic | 180A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 20mW | |
| Number of Transistors | 4 | |
| Configuration | Single Collector | |
| Package Type | AG-62MMHB | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.55V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 60068, IEC 60749, IEC 60747 | |
| Length | 109.9mm | |
| Height | 12.2mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current Ic 180A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 20mW | ||
Number of Transistors 4 | ||
Configuration Single Collector | ||
Package Type AG-62MMHB | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.55V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 60068, IEC 60749, IEC 60747 | ||
Length 109.9mm | ||
Height 12.2mm | ||
Automotive Standard No | ||
The Infineon EasyPACK module is designed for high performance power applications, offering a remarkably efficient solution for energy management. It features TRENCHSTOP IGBT technology, which contributes to low switching losses and high speed operation. This module caters to various applications, such as energy storage systems, solar technologies, and three level configurations. Its robust construction and Advanced features make it an Ideal choice for industrial use, meeting stringent international standards for safety and reliability.
Enhanced power density for Compact applications
PressFIT technology for easy installation
Qualified for demanding industrial use per IEC standards
Integrated NTC sensor for thermal management
Consistent performance with low thermal resistance
High speed IGBT for improved efficiency
Liens connexes
- Infineon F3L225R12W3H3B11BPSA1 180 A 1200 V AG-62MMHB, Through Hole
- Infineon FF800R12KE7EHPSA1 800 A 1200 V Through Hole
- Infineon FF600R12KE7BPSA1 600 A 1200 V Through Hole
- Infineon FF450R12KE7HPSA1 450 A 1200 V Through Hole
- Infineon FF800R12KE7HPSA1 800 A 1200 V Through Hole
- Infineon IGBT Module, 180 A 1200 V AG-ECONO2B-411
- Infineon TDB6HK180N16RRBPSA1 IGBT Module, 180 A 1200 V AG-ECONO2B-411
- Infineon Half Bridge IGBT Chassis