Transcend M.2 2 TB Internal SSD
- N° de stock RS:
- 683-006
- Référence fabricant:
- TS2TMTE760T
- Fabricant:
- Transcend
Sous-total (1 unité)*
1 867,53 €
(TVA exclue)
2 259,71 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 2 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 + | 1 867,53 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 683-006
- Référence fabricant:
- TS2TMTE760T
- Fabricant:
- Transcend
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Transcend | |
| Memory Size | 2TB | |
| Sub Type | SSD | |
| Product Type | SSD | |
| Internal/External | Internal | |
| Industrial Grade | Yes | |
| Form Factor | M.2 | |
| NAND Type | 3D | |
| Interface Type | NVMe PCIe Gen 4 x4 | |
| Encryption Level | 256 Bit AES Encryption | |
| Minimum Operating Temperature | -20°C | |
| Maximum Operating Temperature | 75°C | |
| Length | 80mm | |
| Standards/Approvals | UKCA | |
| Width | 22mm | |
| Height | 2.23mm | |
| Sélectionner tout | ||
|---|---|---|
Marque Transcend | ||
Memory Size 2TB | ||
Sub Type SSD | ||
Product Type SSD | ||
Internal/External Internal | ||
Industrial Grade Yes | ||
Form Factor M.2 | ||
NAND Type 3D | ||
Interface Type NVMe PCIe Gen 4 x4 | ||
Encryption Level 256 Bit AES Encryption | ||
Minimum Operating Temperature -20°C | ||
Maximum Operating Temperature 75°C | ||
Length 80mm | ||
Standards/Approvals UKCA | ||
Width 22mm | ||
Height 2.23mm | ||
- Pays d'origine :
- TW
Transcend SSD, 2TB Memory size, NVMe PCIe Gen 4 x4 Interface Type - TS2TMTE760T
This SSD is an internal storage device designed for high-performance NVMe applications in industrial settings. It connects via a PCIe Gen4 x4 Interface in an M.2 form factor and is intended for use where compact, high-capacity flash storage is required under demanding environmental conditions.
Features and Benefits:
• 2TB capacity enables large dataset and image storage
• NVMe PCIe Gen4 x4 provides high-throughput transfer rates
• 3D NAND offers increased storage density for longevity
• 256-bit AES encryption secures stored data at rest
• Industrial-grade design tolerates extreme operational stress
• Operating range from -20°C to 75°C supports harsh environments
• NVMe PCIe Gen4 x4 provides high-throughput transfer rates
• 3D NAND offers increased storage density for longevity
• 256-bit AES encryption secures stored data at rest
• Industrial-grade design tolerates extreme operational stress
• Operating range from -20°C to 75°C supports harsh environments
Applications
• Suitable for embedded automation controllers requiring local mass storage
• Ideal for data logging in electrical test rigs and instrumentation
• Used with industrial PCs in manufacturing process control
• Can be used for onboard storage in robotics and motion systems
• Suitable for edge computing in remote monitoring installations
• Ideal for data logging in electrical test rigs and instrumentation
• Used with industrial PCs in manufacturing process control
• Can be used for onboard storage in robotics and motion systems
• Suitable for edge computing in remote monitoring installations
What physical footprint does it occupy for board layout planning?
It uses the M.2 2280 footprint with a width of 22mm and a length of 80 mm, enabling Compact placement on compatible carrier boards.
How does it handle elevated junction temperatures during sustained workloads?
The device is rated to operate up to a maximum temperature of 75°C, supporting continuous operation in thermally challenging locations.
Is it suitable for integration into sealed electrical enclosures?
Yes, its industrial grading and temperature tolerance make it appropriate for enclosed equipment where ambient conditions can vary.
Which NAND architecture is employed and what is the impact on endurance?
It uses 3D NAND, which increases cell stacking for higher density and contributes to improved programme/erase endurance profiles compared with Planar NAND.
Liens connexes
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