Infineon 1EDN7126GXTMA1 MOSFET Gate Driver, 1.5 A 11-Pin 11 V, PG-VSON-10

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Sous-total (1 paquet de 5 unités)*

3,66 €

(TVA exclue)

4,43 €

(TVA incluse)

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  • 3 750 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité
Prix par unité
le paquet*
5 - 450,732 €3,66 €
50 - 1200,638 €3,19 €
125 - 2450,602 €3,01 €
250 - 4950,556 €2,78 €
500 +0,51 €2,55 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
240-8520
Référence fabricant:
1EDN7126GXTMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Output Current

1.5A

Pin Count

11

Fall Time

4ns

Package Type

PG-VSON-10

Driver Type

MOSFET

Minimum Supply Voltage

11V

Maximum Supply Voltage

11V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Standards/Approvals

No

Automotive Standard

No

The Infineon EiceDRIVER™ 1EDN7112G is a single-channel gate-driver IC optimized for compatibility with CoolGaN™ HEMTs, and it is also compatible with other Schottky Gate (SG) GaN HEMTs and Silicon MOSFETs, Thanks to the truly differential input (TDI) feature, the gate driver output state is exclusively controlled by the voltage difference between the two inputs, completely independent of the driver’s reference (ground) potential as long as the common-mode voltage is below 150 V (static) and 200 V (dynamic). This eliminates the risk of false triggering due to ground bounce in low-side applications, while also allowing 1EDN7112G to address even high-side applications.

Avoid false triggering in low-side or high-side operation

High common-mode input voltage range for high side operation

Robust operation during fast switching transients

Compatible with 3.3 V or 5 V input logic

Active Miller clamp with 5 A sink capability to avoid induced turn-on

Adjustable charge pump for negative turn-off supply voltage

Suitable for driving GaN HEMTs or Si MOSFETs

Qualified according to JEDEC for target applications

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