Infineon 1EDN7126GXTMA1 MOSFET Gate Driver, 1.5 A 11-Pin 11V, PG-VSON-10
- N° de stock RS:
- 240-8520
- Référence fabricant:
- 1EDN7126GXTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
3,40 €
(TVA exclue)
4,10 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 3 745 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 0,68 € | 3,40 € |
| 50 - 120 | 0,59 € | 2,95 € |
| 125 - 245 | 0,556 € | 2,78 € |
| 250 - 495 | 0,516 € | 2,58 € |
| 500 + | 0,478 € | 2,39 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 240-8520
- Référence fabricant:
- 1EDN7126GXTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Output Current | 1.5A | |
| Pin Count | 11 | |
| Fall Time | 4ns | |
| Package Type | PG-VSON-10 | |
| Driver Type | MOSFET | |
| Minimum Supply Voltage | 11V | |
| Maximum Supply Voltage | 11V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Output Current 1.5A | ||
Pin Count 11 | ||
Fall Time 4ns | ||
Package Type PG-VSON-10 | ||
Driver Type MOSFET | ||
Minimum Supply Voltage 11V | ||
Maximum Supply Voltage 11V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon EiceDRIVER™ 1EDN7112G is a single-channel gate-driver IC optimized for compatibility with CoolGaN™ HEMTs, and it is also compatible with other Schottky Gate (SG) GaN HEMTs and Silicon MOSFETs, Thanks to the truly differential input (TDI) feature, the gate driver output state is exclusively controlled by the voltage difference between the two inputs, completely independent of the driver’s reference (ground) potential as long as the common-mode voltage is below 150 V (static) and 200 V (dynamic). This eliminates the risk of false triggering due to ground bounce in low-side applications, while also allowing 1EDN7112G to address even high-side applications.
Avoid false triggering in low-side or high-side operation
High common-mode input voltage range for high side operation
Robust operation during fast switching transients
Compatible with 3.3 V or 5 V input logic
Active Miller clamp with 5 A sink capability to avoid induced turn-on
Adjustable charge pump for negative turn-off supply voltage
Suitable for driving GaN HEMTs or Si MOSFETs
Qualified according to JEDEC for target applications
Liens connexes
- Infineon MOSFET Gate Driver PG-VSON-10
- Infineon MOSFET Gate Driver PG-VSON-10
- Infineon 1EDN7146GXTMA1 MOSFET Gate Driver PG-VSON-10
- Infineon MOSFET Gate Driver PG-VSON-10
- Infineon MOSFET Gate Driver PG-VSON-10
- Infineon 1EDN7116GXTMA1 MOSFET Gate Driver PG-VSON-10
- Infineon 1EDN7136GXTMA1 MOSFET Gate Driver PG-VSON-10
- Infineon MOSFET Gate Driver 48-Pin, PG-VQFN-48