Microchip MOSFET Gate Driver, 1.2 A 8-Pin 18V, DIP
- N° de stock RS:
- 236-8955P
- Référence fabricant:
- TC1427CPA
- Fabricant:
- Microchip
Offre groupée disponible
Consulter les options de prix de grosSous-total 10 unités (conditionné en tube)*
13,60 €
(TVA exclue)
16,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 540 unité(s) expédiée(s) à partir du 15 décembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 10 - 20 | 1,36 € |
| 25 - 115 | 1,168 € |
| 120 + | 1,048 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 236-8955P
- Référence fabricant:
- TC1427CPA
- Fabricant:
- Microchip
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Product Type | MOSFET | |
| Output Current | 1.2A | |
| Pin Count | 8 | |
| Fall Time | 25ns | |
| Package Type | DIP | |
| Driver Type | MOSFET | |
| Rise Time | 35ns | |
| Minimum Supply Voltage | 18V | |
| Maximum Supply Voltage | 18V | |
| Minimum Operating Temperature | 0°C | |
| Maximum Operating Temperature | 70°C | |
| Series | TC1427 | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Product Type MOSFET | ||
Output Current 1.2A | ||
Pin Count 8 | ||
Fall Time 25ns | ||
Package Type DIP | ||
Driver Type MOSFET | ||
Rise Time 35ns | ||
Minimum Supply Voltage 18V | ||
Maximum Supply Voltage 18V | ||
Minimum Operating Temperature 0°C | ||
Maximum Operating Temperature 70°C | ||
Series TC1427 | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip 1.2 A dual high speed drivers is made up of CMOS fabrication and used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic transistor responsible for CMOS latch-up. They incorporate a number of other design and process refinements to increase their long-term reliability. Specifications have been optimized to achieve low-cost and high-performance devices, well-suited for the high-volume manufacturer.
Low cost
Latch-up protected will withstand 500 mA
Reverse output current
ESD protected ±2 kV
High peak output current 1.2 A
Wide operating range
High capacitive load drive capability 1000 pF in 38 n sec
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