STMicroelectronics, Gate Driver 2, 6 A 16-Pin 5 V, SO-16
- N° de stock RS:
- 233-0477
- Référence fabricant:
- STDRIVEG600TR
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 2500 unités)*
5 130,00 €
(TVA exclue)
6 207,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 31 mars 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 - 2500 | 2,052 € | 5 130,00 € |
| 5000 + | 2,04 € | 5 100,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 233-0477
- Référence fabricant:
- STDRIVEG600TR
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | Gate Driver Module | |
| Output Current | 6A | |
| Pin Count | 16 | |
| Fall Time | 5ns | |
| Package Type | SO-16 | |
| Driver Type | Gate Driver | |
| Minimum Supply Voltage | 3.3V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Series | STDRI | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type Gate Driver Module | ||
Output Current 6A | ||
Pin Count 16 | ||
Fall Time 5ns | ||
Package Type SO-16 | ||
Driver Type Gate Driver | ||
Minimum Supply Voltage 3.3V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Series STDRI | ||
Automotive Standard No | ||
The STMicroelectronics STDRIVEG600 is a single chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFET. The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V. The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.
Interlocking function
UVLO on low-side and high-side sections
Dedicated pin for shut down functionality
Over temperature protection
Liens connexes
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