onsemi, IGBT, 6.5 A 8-Pin 20 V, SOIC

Sous-total (1 bobine de 1000 unités)*

1 368,00 €

(TVA exclue)

1 655,00 €

(TVA incluse)

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Dernier stock RS
  • 2 000 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
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Prix par unité
la bobine*
1000 +1,368 €1 368,00 €

*Prix donné à titre indicatif

N° de stock RS:
230-9047
Référence fabricant:
NCD57090EDWR2G
Fabricant:
onsemi
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Marque

onsemi

Product Type

IGBT Module

Output Current

6.5A

Pin Count

8

Package Type

SOIC

Fall Time

13ns

Number of Outputs

5

Driver Type

IGBT

Rise Time

13ns

Minimum Supply Voltage

20V

Maximum Supply Voltage

20V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Width

4 mm

Height

1.75mm

Standards/Approvals

No

Series

NCD57090

Length

5mm

Mount Type

Surface

Automotive Standard

AEC-Q100

The ON Semiconductor series NCD57090E are high−current single channel IGBT gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (NCD57090E). NCD57090E accommodate wide range of input bias voltage and signal levels from 3.3 V to 20 V.

Improves system efficiency

Short Propagation Delays with Accurate Matching

Improves PWM signal integrity

High Transient & Electromagnetic Immunity

Ruggedness in fast slew rate high voltage and high current switching applications

5 KVrms On-Chip Galvanic Isolation

Saves cost and board space while offering improved performance compared to opto-drivers

Wide Bias Voltage Ranges and Input Voltage Range

Offers system design flexibility and allows the usage of commonly available system voltage rails

Active Miller Clamp or Negative Gate Voltage or Split Outputs

Offers a choice in selecting the right feature in a compact package

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