Infineon MOSFET Gate Driver 1, 8 A 6-Pin 20 V, SOT-23
- N° de stock RS:
- 222-4766
- Référence fabricant:
- 1EDN8511BXUSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 bobine de 3000 unités)*
702,00 €
(TVA exclue)
849,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 9 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,234 € | 702,00 € |
| 6000 + | 0,228 € | 684,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 222-4766
- Référence fabricant:
- 1EDN8511BXUSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Output Current | 8A | |
| Pin Count | 6 | |
| Fall Time | 4.5ns | |
| Package Type | SOT-23 | |
| Number of Outputs | 2 | |
| Driver Type | MOSFET | |
| Rise Time | 6.5ns | |
| Minimum Supply Voltage | 4.2V | |
| Number of Drivers | 1 | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.45mm | |
| Series | 1EDN8511B | |
| Length | 2.9mm | |
| Width | 1.6 mm | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Output Current 8A | ||
Pin Count 6 | ||
Fall Time 4.5ns | ||
Package Type SOT-23 | ||
Number of Outputs 2 | ||
Driver Type MOSFET | ||
Rise Time 6.5ns | ||
Minimum Supply Voltage 4.2V | ||
Number of Drivers 1 | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.45mm | ||
Series 1EDN8511B | ||
Length 2.9mm | ||
Width 1.6 mm | ||
Mount Type Surface | ||
Automotive Standard No | ||
The Infineon 1-channel MOSFET gate driver ICs are the crucial link between control ICs and powerful MOSFET and GaN switching devices. Gate driver ICs enable high system level efficiencies, excellent power density and consistent system robustness.
-10V robustness of control and enable inputs provides crucial safety margin when driving pulse transformers
5A reverse output current robustness eliminates the need for Schottky switching diodes when driving MOSFETs in TO-220 and TO-247 packages
Cool driver ICs thanks to true rail-to-rail low impedance output stages
4V and 8V UVLO (Under Voltage Lock Out) options for instant MOSFET protection during start-up and under abnormal conditions
Liens connexes
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