onsemi, IGBT 1, 6.5 A 8-Pin 22 V, SOIC
- N° de stock RS:
- 221-6665
- Référence fabricant:
- NCV57090CDWR2G
- Fabricant:
- onsemi
Sous-total (1 bobine de 1000 unités)*
1 397,00 €
(TVA exclue)
1 690,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 06 août 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 + | 1,397 € | 1 397,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 221-6665
- Référence fabricant:
- NCV57090CDWR2G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | IGBT Module | |
| Output Current | 6.5A | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Fall Time | 13ns | |
| Number of Outputs | 5 | |
| Driver Type | IGBT | |
| Rise Time | 13ns | |
| Minimum Supply Voltage | 22V | |
| Maximum Supply Voltage | 22V | |
| Number of Drivers | 1 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Width | 6.05 mm | |
| Series | NCx57090y | |
| Height | 2.65mm | |
| Length | 7.6mm | |
| Mount Type | Surface | |
| Automotive Standard | AEC-Q100 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type IGBT Module | ||
Output Current 6.5A | ||
Pin Count 8 | ||
Package Type SOIC | ||
Fall Time 13ns | ||
Number of Outputs 5 | ||
Driver Type IGBT | ||
Rise Time 13ns | ||
Minimum Supply Voltage 22V | ||
Maximum Supply Voltage 22V | ||
Number of Drivers 1 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Width 6.05 mm | ||
Series NCx57090y | ||
Height 2.65mm | ||
Length 7.6mm | ||
Mount Type Surface | ||
Automotive Standard AEC-Q100 | ||
The ON Semiconductor NCD57090 are high−current single channel IGBT/MOSFET gate driver with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The device accept complementary input and depending on the pin configuration, offer options such as active miller clamp, negative power supply and separate high and low driver output for system design convenience.
High transient immunity
High electromagnetic immunity
Short propagation delays with accurate matching
Liens connexes
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